Optoelectronic property refinement of FASnI3 films for photovoltaic application

Jorim, Okoth Obila; Hongwei, Lei; Elijah, Omollo Ayieta; Alex, Awuor Ogacho; Bernard, O. Aduda; Feng, Wang

dc.contributor.author	Jorim, Okoth Obila
dc.contributor.author	Hongwei, Lei
dc.contributor.author	Elijah, Omollo Ayieta
dc.contributor.author	Alex, Awuor Ogacho
dc.contributor.author	Bernard, O. Aduda
dc.contributor.author	Feng, Wang
dc.date.accessioned	2022-05-15T14:33:39Z
dc.date.available	2022-05-15T14:33:39Z
dc.date.issued	2021
dc.identifier.uri	http://hdl.handle.net/20.500.12562/1638
dc.description	NA	en_US
dc.description.abstract	Tin (Sn) is a promising substitute for lead (Pb) in organic–inorganic hybrid halide perovskite-photovoltaic devices, but it is prone to delivering low power conversion efficiencies (PCEs) due to the poor quality of Sn-perovskite films. In this work, anilinium hypophosphite (AHP) co-additive is used to fabricate high-quality FASnI3 (FA+: formamidinium) perovskite films with suppressed phase-segregation and prolonged charge carrier lifetime. Perovskite films containing 0.05 M AHP are used to fabricate solar cells and deliver improved power conversion efficiency (PCE) of up to 5.48% (control devices: 4.04%). AHP eliminates the phase separation caused by SnF2 in the absorber, leading to films with enhanced optoelectronic properties, hence the high performance of AHP-based devices.	en_US
dc.description.sponsorship	Check PDF	en_US
dc.publisher	Sience Direct-Material Letters	en_US
dc.rights	Attribution-NonCommercial-ShareAlike 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-sa/3.0/us/	*
dc.subject	Semiconductors	en_US
dc.subject	Solar energy materials	en_US
dc.subject	Sn-perovskite	en_US
dc.title	Optoelectronic property refinement of FASnI3 films for photovoltaic application	en_US
dc.type	Article	en_US